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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-316 DIMENSIONS The EL-316 is a high-power GaAs IRED mounted in a clear epoxy package. (Unit : mm) FEATURES U(c)TM3 casting mold type UHigh output power APPLICATIONS U TR V UOptical remote controllers UTransmission sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 4 60 80 0.5 5 80 2 0 85 4 240 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity Half angle (Ta=2...) 5 Symbol VF R I *Ip **I PO **E Conditions F= I 40mA VR=4V F= I 40mA F= I 40mA F=40mA I Min. Typ. 1.2 940 50 20 ae 7 1 Max. 1.5 10 Unit. V *I A nm nm mW/sr deg. 10 - 1- Infrared Emitting Diodes(GaAs) EL-316 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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